Researchers at the King Abdullah University of Science and Technology (KAUST) in Saudi Arabia have investigated whether the temperature coefficient of the short circuit current in perovskite-silicon ...
Transphorm, a developer of GaN power semiconductors, has successfully demonstrated up to 5 microsecond short circuit withstand time (SCWT) on a GaN power transistor with a patented technology. The ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in GaN power semiconductors, the future of next generation power systems, today announced it has demonstrated up to 5 ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback