Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
MORRISTOWN, NJ — Want to improve your hvacr circuit troubleshooting accuracy? Make sure that the ammeters you use are appropriate for today’s electrical loads, many of which have electronic signals ...
Gallium nitride (GaN) semiconductor devices must pass stringent robustness tests to survive extreme conditions with both high current and high voltage. Here, short-circuits survivability is the most ...
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