We demonstrate a 12-quantum-dot device fabricated on an undoped Si/SiGe heterostructure as a proof of concept for a scalable, linear gate architecture for semiconductor quantum dots. The device ...
Abstract: Enhancement mode p-GaN gate HEMTs with two different gate architectures are compared. The gate is realized by stacked (1-mask) or separate patterning (3-mask) of the p-GaN and gate metal ...
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