A new technical paper titled “Lateral Semiconductor–Free-Space Gate Transistors” was published by researchers at KAUST and ...
In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...
The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...
Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...
Magnachip plans to use this technology to expand its industrial business. IGBTs are power semiconductors that are used in ...
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